IEC 63275-1:2022 outlines a testing protocol for evaluating the shift in gate threshold voltage of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs), which involves measuring at room temperature following the application of continuous positive gate-source voltage stress at elevated temperatures. This method accommodates a degree of recovery by incorporating extended intervals between the stress phase and the measurement phase, with delays of up to 10 hours.
